Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FERD40U45CT

FERD40U45CT

STMicroelectronics

DIODE ARRAY 45V 20A TO220AB

1221

STPS160H100TV

STPS160H100TV

STMicroelectronics

DIODE MODULE 100V 80A ISOTOP

143

STTH2002CG-TR

STTH2002CG-TR

STMicroelectronics

DIODE ARRAY GP 200V 15A D2PAK

50

STPS20120CR

STPS20120CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 120V I2PAK

739

STPS3030CG-TR

STPS3030CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V D2PAK

29

STPS30120CTN

STPS30120CTN

STMicroelectronics

DIODE ARRAY SCHOTTKY 120V TO220

0

STTH2002CT

STTH2002CT

STMicroelectronics

DIODE ARRAY GP 200V 15A TO220AB

633

STPS4045CW

STPS4045CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V TO247-3

1135

STPS3045CG

STPS3045CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V D2PAK

0

STPS15L30CDJFTR

STPS15L30CDJFTR

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V 7.5A

2761

STPS15L60CB-TR

STPS15L60CB-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V DPAK

5665

STPS20L60CGY-TR

STPS20L60CGY-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V D2PAK

454

STTH60W03CW

STTH60W03CW

STMicroelectronics

DIODE ARRAY GP 300V 30A TO247

725

STPS3045CP

STPS3045CP

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V SOT93

0

STPS15H100CBY-TR

STPS15H100CBY-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V DPAK

277

STPS80170CW

STPS80170CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V TO247

2692

STTH3002CR

STTH3002CR

STMicroelectronics

DIODE ARRAY GP 200V 15A I2PAK

0

STPS40SM120CR

STPS40SM120CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 120V I2PAK

0

STPS16170CR

STPS16170CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V I2PAK

0

STPSC8H065CT

STPSC8H065CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 650V TO220

30

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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