Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STTH602CSF

STTH602CSF

STMicroelectronics

ULTRAFAST RECTIFIER 200V, DUAL 3

6000

STTH802CB-TR

STTH802CB-TR

STMicroelectronics

DIODE ARRAY GP 200V 4A DPAK

10603

BAR43CFILM

BAR43CFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V SOT23-3

685

FERD40U50CFP

FERD40U50CFP

STMicroelectronics

DIODE ARRAY 50V 20A TO220FP

0

STPS10L40CG-TR

STPS10L40CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V D2PAK

2060

STPS2030CT

STPS2030CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V TO220AB

574

FERD30L60CG-TR

FERD30L60CG-TR

STMicroelectronics

DIODE ARRAY 60V 15A D2PAK

1639

STPS30SM60CT

STPS30SM60CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220AB

0

STPS15L30CB-TR

STPS15L30CB-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V DPAK

2201

STPS20120CT

STPS20120CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 120V TO220

0

FERD40U45CG-TR

FERD40U45CG-TR

STMicroelectronics

DIODE ARRAY 45V 20A D2PAK

0

BAS70-06FILM

BAS70-06FILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 70V SOT23-3

0

BAT30SWFILM

BAT30SWFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V SOT323

18107

STPS20L45CG-TR

STPS20L45CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V D2PAK

0

STPSC8TH13TI

STPSC8TH13TI

STMicroelectronics

DIODE ARRAY SCHOTTKY 650V TO220

968

STTH806TTI

STTH806TTI

STMicroelectronics

DIODE ARRAY GP 600V 8A TO220AB

1169

BAS70-04WFILM

BAS70-04WFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 70V SOT323

1523

STPS30SM60CR

STPS30SM60CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V I2PAK

0

BAT54SWFILM

BAT54SWFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V SOT323

32561

STPS30H60CR

STPS30H60CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V I2PAK

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top