Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STTH30W03CW

STTH30W03CW

STMicroelectronics

DIODE ARRAY GP 300V 15A TO247

0

STTH200W04TV1

STTH200W04TV1

STMicroelectronics

DIODE MODULE 400V 100A ISOTOP

0

BYT261PIV-400

BYT261PIV-400

STMicroelectronics

DIODE MODULE 400V 60A ISOTOP

0

STPS10M80CT

STPS10M80CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TO220AB

0

STPS1545CB-TR

STPS1545CB-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V DPAK

0

STPS10M80CG-TR

STPS10M80CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V D2PAK

0

BAT41AWFILM

BAT41AWFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V SOT323

0

BYW99P-200

BYW99P-200

STMicroelectronics

DIODE ARRAY GP 200V 15A SOT93

0

STPS30L40CW

STPS30L40CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V TO247-3

0

STPS20170CR

STPS20170CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V I2PAK

0

STPS30M60CG-TR

STPS30M60CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V D2PAK

0

STPS2045CH

STPS2045CH

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V IPAK

0

STPS3030CG

STPS3030CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V D2PAK

0

STTH30R03CG

STTH30R03CG

STMicroelectronics

DIODE ARRAY GP 300V 15A D2PAK

0

STPS10170CB

STPS10170CB

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V DPAK

0

STTH1302CG-TR

STTH1302CG-TR

STMicroelectronics

DIODE ARRAY GP 200V 6.5A D2PAK

0

STPS15SM80CT

STPS15SM80CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TO220AB

0

STPS20SM60CG-TR

STPS20SM60CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V D2PAK

0

BYV541V-200

BYV541V-200

STMicroelectronics

DIODE MODULE 200V 50A ISOTOP

0

STPS16170CB

STPS16170CB

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V DPAK

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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