Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
SET030811

SET030811

Semtech

DIODE MODULE 150V 15A

0

SCNA05FF

SCNA05FF

Semtech

DIODE ARRAY 50V 7.5A

0

SET040223

SET040223

Semtech

DIODE MODULE 500V 10A

0

SET050211

SET050211

Semtech

DIODE MODULE 150V 30A

0

S1KW32C-4N

S1KW32C-4N

Semtech

DIODE GEN PURP 32KV 3A

0

SET040303

SET040303

Semtech

DIODE MODULE 1000V 15A

0

S1KW24C-3D

S1KW24C-3D

Semtech

DIODE GEN PURP 24KV 1.5A

0

SET050323

SET050323

Semtech

DIODE MODULE 500V 20A

0

SCDA05FF

SCDA05FF

Semtech

DIODE ARRAY 50V 3.75A

0

SET040104

SET040104

Semtech

DIODE MODULE 400V 15A

0

S1KW16C-2P

S1KW16C-2P

Semtech

DIODE GEN PURP 16KV 3A

0

SET050111

SET050111

Semtech

DIODE MODULE 150V 30A

0

SCPA4

SCPA4

Semtech

DIODE ARRAY GP 400V 7.5A

0

SET031003

SET031003

Semtech

DIODE MODULE 1000V 15A

0

SDHP5KM

SDHP5KM

Semtech

DIODE ARRAY 5000V 1A

0

SCNAS6

SCNAS6

Semtech

DIODE ARRAY 600V 42.5A

0

S1KW24C-3N

S1KW24C-3N

Semtech

DIODE GEN PURP 24KV 3A

0

SET040403

SET040403

Semtech

DIODE MODULE 1000V 15A

0

SET100304

SET100304

Semtech

DIODE MODULE 400V 45A

0

SET050224

SET050224

Semtech

DIODE MODULE 400V 30A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top