Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
SET040219

SET040219

Semtech

DIODE MODULE 1000V 10A

0

SET031012

SET031012

Semtech

DIODE MODULE 600V 15A

0

SET040123

SET040123

Semtech

DIODE MODULE 500V 10A

0

SCNA10FF

SCNA10FF

Semtech

DIODE ARRAY 100V 7.5A

0

SET030819

SET030819

Semtech

DIODE MODULE 1000V 10A

0

SDHP15KM

SDHP15KM

Semtech

DIODE ARRAY 15000V 1A

0

SET050123

SET050123

Semtech

DIODE MODULE 500V 20A

0

SET100123

SET100123

Semtech

DIODE MODULE 500V 30A

0

SET031004

SET031004

Semtech

DIODE MODULE 400V 15A

0

SCPA2

SCPA2

Semtech

DIODE ARRAY GP 200V 7.5A

0

SET040319

SET040319

Semtech

DIODE MODULE 1000V 10A

0

SDHN7.5K

SDHN7.5K

Semtech

DIODE ARRAY 7500V 400MA

0

SCDAS15FF

SCDAS15FF

Semtech

DIODE ARRAY 150V 21.25A

0

SET030623

SET030623

Semtech

DIODE MODULE 500V 10A

0

SCPND15

SCPND15

Semtech

DIODE GP 15000V 2.75A

0

S1KW24C-3P

S1KW24C-3P

Semtech

DIODE GEN PURP 24KV 3A

0

SET031023

SET031023

Semtech

DIODE MODULE 500V 10A

0

SDHD10KM

SDHD10KM

Semtech

DIODE GEN PURP 10KV 1A

0

SET040404

SET040404

Semtech

DIODE MODULE 400V 15A

0

SDHN5KS

SDHN5KS

Semtech

DIODE ARRAY 5000V 2.5A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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