Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
SDHP5KS

SDHP5KS

Semtech

DIODE ARRAY 5000V 2.5A

0

SET030624

SET030624

Semtech

DIODE FAST 600V 20A

0

S1KW16C-2D

S1KW16C-2D

Semtech

DIODE GEN PURP 16KV 1.5A

0

S1KW48C-6N

S1KW48C-6N

Semtech

DIODE GEN PURP 48KV 3A

0

SCDA10FF

SCDA10FF

Semtech

DIODE ARRAY 100V 3.75A

0

SCDA4

SCDA4

Semtech

DIODE ARRAY 400V 3.75A

0

SCPND5

SCPND5

Semtech

DIODE GP 5000V 2.75A

0

S1KW40C-5N

S1KW40C-5N

Semtech

DIODE GEN PURP 40KV 3A

0

SCPA10FF

SCPA10FF

Semtech

DIODE ARRAY GP 100V 7.5A

0

SDHN5KM

SDHN5KM

Semtech

DIODE ARRAY 5000V 1A

0

SET030604

SET030604

Semtech

DIODE MODULE 400V 15A

0

SET030612

SET030612

Semtech

DIODE MODULE 600V 15A

0

SCPAS4F

SCPAS4F

Semtech

DIODE ARRAY GP 400V 40A

0

SDHP7.5K

SDHP7.5K

Semtech

DIODE ARRAY 7500V 400MA

0

SET100203

SET100203

Semtech

DIODE MODULE 1000V 45A

0

SET030619

SET030619

Semtech

DIODE MODULE 1000V 10A

0

SCSPM0L

SCSPM0L

Semtech

DIODE ARRAY 1000V 75A

0

S1KW32C-4P

S1KW32C-4P

Semtech

DIODE GEN PURP 32KV 3A

0

SET100303

SET100303

Semtech

DIODE MODULE 1000V 45A

0

S1KW40C-5P

S1KW40C-5P

Semtech

DIODE GEN PURP 40KV 3A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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