Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
SCDAS6

SCDAS6

Semtech

DIODE ARRAY 600V 21.25A

0

SET040212

SET040212

Semtech

DIODE MODULE 600V 15A

0

SET100104

SET100104

Semtech

DIODE MODULE 400V 45A

0

SCDAR4

SCDAR4

Semtech

DIODE ARRAY 400V 11.25A

0

SCSPF4L

SCSPF4L

Semtech

DIODE FAST 400V 60A

0

SET040304

SET040304

Semtech

DIODE MODULE 400V 15A

0

SCSPFF10L

SCSPFF10L

Semtech

DIODE FAST 100V 75A

0

SCPAS15FF

SCPAS15FF

Semtech

DIODE ARRAY GP 150V 42.5A

0

SET100312

SET100312

Semtech

DIODE MODULE 600V 45A

0

SCNA6

SCNA6

Semtech

DIODE ARRAY 600V 7.5A

0

SCPA05FF

SCPA05FF

Semtech

DIODE ARRAY GP 50V 7.5A

0

SET030611

SET030611

Semtech

DIODE MODULE 150V 15A

0

SCPAR1

SCPAR1

Semtech

DIODE ARRAY GP 100V 22.5A

0

SCPNP5

SCPNP5

Semtech

DIODE GP 5000V 5.5A

0

SET050203

SET050203

Semtech

DIODE MODULE 1000V 30A

0

SDHD15K

SDHD15K

Semtech

DIODE GEN PURP 15KV 600MA

0

SET040103

SET040103

Semtech

DIODE MODULE 1000V 15A

0

SET100204

SET100204

Semtech

DIODE MODULE 400V 45A

0

SET030803

SET030803

Semtech

DIODE MODULE 1000V 15A

0

S1KW40C-5D

S1KW40C-5D

Semtech

DIODE GEN PURP 40KV 1.5A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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