TVS - Mixed Technology

Part Number	Description / PDF	Quantity
TISP9110LDMR-S J.W. Miller / Bourns	SURGE PROT THYRIST NEG/POS SLIC	5900
B72527G3200K000 TDK EPCOS	VARISTOR 33V 200A RADIAL	345
TL7726QDR Texas Instruments	IC HEX CLAMPING CIRCUITS 8-SOIC	8465
SP721APP Wickmann / Littelfuse	TVS ARRAY ESD 6 INPUT 30V 8-DIP	45544000
VM474MK122R017P050 KEMET	VARISTOR 27V 1.2KA RADIAL	0
CLT01-38S4 STMicroelectronics	PROTECTION DGTL ARRAY 38HTSSOP	0
FR014H5JZ Sanyo Semiconductor/ON Semiconductor	HI SIDE REV BIAS PROTECT 30V MLP	390
SEP0900Q38CB Wickmann / Littelfuse	SIDACTOR ETHERNET POE 90V 100A	6750
V2F105C150Y1FDP Elco (AVX)	VARISTOR CAP FEEDTHRU 5.6V 0805	1648
GMOV-14D141K J.W. Miller / Bourns	GMOV 14MM, 140VRMS	400
GMOV-20D321K J.W. Miller / Bourns	GMOV 20MM, 320VRMS	0
2882585 Phoenix Contact	S-PT-EX(I)-24DC-3/4"	0
82356120220 Würth Elektronik Midcom	ESD SUPPRESSOR TVS 55V 0603	3918
TPD7S019-15DBQR Texas Instruments	IC ESD SOLUTION 7CH 16SSOP	6728
1840-05-A1 J.W. Miller / Bourns	SURGE PROTECTION DEVICE 5V	0
P1701UALRP Wickmann / Littelfuse	SIDAC SLIC UNI 160V 50A MS013	0
ESDU03A3V3R25V Stackpole Electronics, Inc.	VARISTOR 25V 0603	0
SN65220DBVRG4 Texas Instruments	IC USB TRANSIENT SUPP SOT23-6	213
VM105MK122R017P050 KEMET	VARISTOR 27V 1.2KA RADIAL	0
ESDU03A12VR17V Stackpole Electronics, Inc.	VARISTOR 17V 0603	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials