TVS - Mixed Technology

Part Number	Description / PDF	Quantity
B1161UALTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 50A MS013	0
VK103MK151R060P050 KEMET	VARISTOR 100V 150A RADIAL	0
2410-31-G-MSP J.W. Miller / Bourns	CENTRAL OFFICE PROTECTOR HYBRID	0
P0901SALRP Wickmann / Littelfuse	SIDACTOR UNI 75V 50A DO214	0
SP721ABG Wickmann / Littelfuse	TVS ARRAY ESD 6 INPUT 30V 8-SOIC	10196
ADG467BRSZ-REEL Analog Devices, Inc.	IC CHAN PROTECTOR OCTAL 20-SSOP	1598
VM155MK801R017P050 KEMET	VARISTOR 27V 800A RADIAL	0
2800039 Phoenix Contact	S-PT-2XEX-48DC-1/2"	0
SDP2600Q38CB Wickmann / Littelfuse	SIDAC BI 220V 500A QFN 5X6 8L	0
IXBOD1-08 Wickmann / Littelfuse	IC SGL DIODE BOD 0.9A 800V FP	0
P1101UALRP Wickmann / Littelfuse	SIDACTOR SLIC UNI 4CHP 50A MS013	0
NCP346SN1T1G	POWER SUPPLY CIRCUIT, ADJ	135146
82356120050 Würth Elektronik Midcom	ESD SUPPRESSOR TVS 80V 0603	0
PS04LTVA1 PowerStor (Eaton)	TVS DIODE ESD 5V 0402 0.05PF	85333
0603ESDA-MLP7 PowerStor (Eaton)	SUPPRESSOR ESD 30VDC 0603 SMD	13073
ESDU02A12VR17V Stackpole Electronics, Inc.	VARISTOR 17V 0402	0
TPD7S019-15RSVR Texas Instruments	IC ESD SOLUTION 7CH 16UQFN	2495
NUS3055MUTAG	POWER SUPPLY CIRCUIT, FIXED	17962
B2050CCLRP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A DO214	0
P0721CA2LRP Wickmann / Littelfuse	SIDACTOR UNI 65V 50A DO214	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials