TVS - Mixed Technology

Part Number	Description / PDF	Quantity
82356050050 Würth Elektronik Midcom	ESD SUPPRESSOR 0603; 5VDC; 5PF	9475
P0641UCLTP Wickmann / Littelfuse	SIDACTOR SYM 4CHP 58V 500A MS013	0
82356120330 Würth Elektronik Midcom	ESD SUPPRESSOR TVS 55V 0603	0
ADG465BRM-REEL Analog Devices, Inc.	SINGLE CHANNEL PROTECTOR	6487
P1001DF-1E Wickmann / Littelfuse	SIDACTOR SLIC ENHC 85V 30A 8SOIC	0
P1701UALTP Wickmann / Littelfuse	SIDAC SLIC UNI 160V 50A MS013	0
VK105MK151R040P050 KEMET	VARISTOR 68V 150A RADIAL	0
DSLP0080T023G6RP Wickmann / Littelfuse	SIDACTOR G.FAST 8V 30A SOT23-6	0
PCLT-2AT4-TR STMicroelectronics	IC OVP DGTL TERMINATION 14-TSSOP	1064
B3164UALTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 50A MS013	0
ZEN132V130A24YC Wickmann / Littelfuse	POLYZEN PPTC/ZENER SMD	2000
DSLP0120T023G6RP Wickmann / Littelfuse	SIDACTOR G.FAST 12V 30A SOT23-6	0
ZEN132V260A16YC Wickmann / Littelfuse	POLYZEN PPTC/ZENER SMD	0
B1160CCLRP Wickmann / Littelfuse	BATTRAX SLIC SNGL NEG 400A DO214	0
ESD03A24VR25V Stackpole Electronics, Inc.	VARISTOR 25V 0603	32777
2905223 Phoenix Contact	SURGE PROTECTION MODULE 34V	0
TPD13S523PWR Texas Instruments	TVS DIODE 5.5VWM 15VC 16TSSOP	3089
82356050100 Würth Elektronik Midcom	ESD SUPPRESSOR TVS 60V 0603	0
VK103ML151R008P050 KEMET	VARISTOR 15V 150A RADIAL	0
0402ESDA-MLP7 PowerStor (Eaton)	SUPPRESSOR ESD 30VDC 0402 SMD	2147483647

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials