TVS - Mixed Technology

Part Number	Description / PDF	Quantity
P1101CA2LRP Wickmann / Littelfuse	SIDAC DL-CHP SLIC 95V 150A DO214	2348
VM474MK122R030P050 KEMET	VARISTOR 47V 1.2KA RADIAL	990
82356050220 Würth Elektronik Midcom	ESD SUPPRESSOR 0603; 5VDC; 22PF	4056
ADG467BRZ-REEL7 Analog Devices, Inc.	IC CHANNEL PROTECTOR OCT 18SOIC	517
TISP8201HDMR-S J.W. Miller / Bourns	SLIC PROTECTOR 100 AMP	0
SN65240PWRG4 Texas Instruments	IC USB TRANSIENT SUPP 8-TSSOP	0
VM155MK801R020P050 KEMET	VARISTOR 33V 800A RADIAL	0
82357050560 Würth Elektronik Midcom	ESD SUPPRESSOR TVS 55V 0402	0
1669-02 J.W. Miller / Bourns	SIGNAL PROTECT FIELD	0
MAX4867ELT+T Analog Devices, Inc.	OVERVOLTAGE-PROTECTION	7500
P0901UCLTP Wickmann / Littelfuse	SIDACTOR SYM 4CHP 75V 500A MS013	0
2838762 Phoenix Contact	SURGE PROTECTION PLUG 5VDC	4
VM155MK801R030P050 KEMET	VARISTOR 47V 800A RADIAL	0
SEP0720Q38CB Wickmann / Littelfuse	SIDACTOR ETHERNET POE 72V 100A	4803
82306120029 Würth Elektronik Midcom	VARISTOR 12VDC .2PF ESD 0603	2548
MAX367EWN Analog Devices, Inc.	SIGNAL-LINE CIRCUIT PROTECTOR	13480
VK105MK151R020P050 KEMET	VARISTOR 33V 150A RADIAL	0
P0721UCLTP Wickmann / Littelfuse	SIDACTOR SYM 4CHP 65V 500A MS013	0
NCP360MUTBG Sanyo Semiconductor/ON Semiconductor	IC CTLR USB POS OVP FET 6-UDFN	881
MAX366ESA Analog Devices, Inc.	SIGNAL-LINE CIRCUIT PROTECTOR	5840

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials