TVS - Mixed Technology

Part Number	Description / PDF	Quantity
NCP348AEMTTBG	HALF BRIDGE BASED MOSFET DRIVER	326048
VK103MM151R004P050 KEMET	VARISTOR 8V 150A RADIAL	0
VK105MK151R030P050 KEMET	VARISTOR 47V 150A RADIAL	0
B1201UC4LRP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A MS013	0
P1101SCLRP Wickmann / Littelfuse	SIDAC SLIC UNI 95V 400A DO-214AA	3778
1669-06 J.W. Miller / Bourns	SIGNAL PROTECT FIELD	53
P0721DF-1E Wickmann / Littelfuse	SIDACTOR SLIC ENHC 65V 30A 8SOIC	0
V2F105A150Y2ERP Elco (AVX)	VARISTOR CAP FEEDTHRU 5.6V 0805	120004000
SDP1800Q38CB Wickmann / Littelfuse	SIDAC BI 170V 500A QFN 5X6 8L	3971
B1101UCLRP Wickmann / Littelfuse	BATTRAX SLIC DUAL 500A MS-013	0
P0641UALTP Wickmann / Littelfuse	SIDACTOR UNI 4CHP 58V 50A MS013	0
P0721UALTP Wickmann / Littelfuse	SIDACTOR UNI 4CHP 65V 50A MS013	0
TPD2S703QDGSRQ1 Texas Instruments	TVS MIXED TECHNOLOGY 6VC 10VSSOP	0
TISP6NTP2CDR-S J.W. Miller / Bourns	SURGE PROT THYRIST 155VDUAL SLIC	164
P1701DF-1E Wickmann / Littelfuse	SIDACTOR SLIC ENH 160V 30A 8SOIC	0
B1161UCLRP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A MS013	0
VK103MK151R020P050 KEMET	VARISTOR 33V 150A RADIAL	0
NIV1161MTTAG Sanyo Semiconductor/ON Semiconductor	IC ESD PROTECT AUTO DATA 6WDFN	0
DSLP0180T023G6RP Wickmann / Littelfuse	SIDACTOR G.FAST 18V 30A SOT23-6	9000
B3204UALTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 50A MS013	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials