TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MPLAD15KP26AE3

MPLAD15KP26AE3

Roving Networks / Microchip Technology

TVS DIODE 26V 42.1V PLAD

0

MSMLJ24CAE3

MSMLJ24CAE3

Roving Networks / Microchip Technology

TVS DIODE 24V 38.9V DO214AB

0

MXSMBJ110A

MXSMBJ110A

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AA

0

SMBJ18CE3/TR13

SMBJ18CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 18V 32.2V DO214AA

0

M15KP200CA

M15KP200CA

Roving Networks / Microchip Technology

TVS DIODE 200V 322V DO204AR

0

MASMCJ130AE3

MASMCJ130AE3

Roving Networks / Microchip Technology

TVS DIODE 130V 209V DO214AB

0

SMCJ7.5CE3/TR13

SMCJ7.5CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 7.5V 14.3V DO214AB

0

MSMLJ43CAE3

MSMLJ43CAE3

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO214AB

0

MXLSMCJLCE75A

MXLSMCJLCE75A

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AB

0

MRT100KP180CAE3

MRT100KP180CAE3

Roving Networks / Microchip Technology

TVS DIODE 180V 354V CASE 5A

0

MXSMCJ7.5CAE3

MXSMCJ7.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO214AB

0

MSMBG130CAE3

MSMBG130CAE3

Roving Networks / Microchip Technology

TVS DIODE 130V 209V DO215AA

0

JANTXV1N6124AUS

JANTXV1N6124AUS

Roving Networks / Microchip Technology

TVS DIODE 42.6V 77V B SQ-MELF

0

MXSMLJ22CAE3

MXSMLJ22CAE3

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO214AB

0

MXLSMBG20A

MXLSMBG20A

Roving Networks / Microchip Technology

TVS DIODE 20V 32.4V DO215AA

0

MXSMCJ40CA

MXSMCJ40CA

Roving Networks / Microchip Technology

TVS DIODE 40V 64.5V DO214AB

0

SMBJ11AE3/TR13

SMBJ11AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V DO214AA

0

M5KP48AE3

M5KP48AE3

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO204AR

0

MASMBJSAC75E3

MASMBJSAC75E3

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AA

0

1N6055A

1N6055A

Roving Networks / Microchip Technology

TVS DIODE 40V 64.8V DO13

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top