TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
M15KP36CAE3

M15KP36CAE3

Roving Networks / Microchip Technology

TVS DIODE 36V 59.7V DO204AR

0

MXLSMCJ7.0CAE3

MXLSMCJ7.0CAE3

Roving Networks / Microchip Technology

TVS DIODE 7V 12V DO214AB

0

JANTXV1N6130AUS

JANTXV1N6130AUS

Roving Networks / Microchip Technology

TVS DIODE 76V 137.6V B SQ-MELF

0

SMCJ90E3/TR13

SMCJ90E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 90V 160V DO214AB

0

MXL15KP26A

MXL15KP26A

Roving Networks / Microchip Technology

TVS DIODE 26V 44V CASE 5A

0

MSMCJLCE160A

MSMCJLCE160A

Roving Networks / Microchip Technology

TVS DIODE 160V 259V DO214AB

0

MXL5KP13A

MXL5KP13A

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V CASE 5A

0

MXLRT100KP75AE3

MXLRT100KP75AE3

Roving Networks / Microchip Technology

TVS DIODE 75V 147V CASE 5A

0

SMLJ8.5AE3/TR13

SMLJ8.5AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO214AB

0

MXLSMCJ51CAE3

MXLSMCJ51CAE3

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO214AB

0

SMBJ150CAE3/TR13

SMBJ150CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO214AA

0

MXSMLJ16AE3

MXSMLJ16AE3

Roving Networks / Microchip Technology

TVS DIODE 16V 26V DO214AB

0

MPLAD30KP120CA

MPLAD30KP120CA

Roving Networks / Microchip Technology

TVS DIODE 120V 193V PLAD

0

MX5KP6.5CA

MX5KP6.5CA

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V CASE 5A

0

MXSMLJ24CA

MXSMLJ24CA

Roving Networks / Microchip Technology

TVS DIODE 24V 38.9V DO214AB

0

M5KP7.0A

M5KP7.0A

Roving Networks / Microchip Technology

TVS DIODE 7V 12V DO204AR

0

M15KP58CAE3

M15KP58CAE3

Roving Networks / Microchip Technology

TVS DIODE 58V 94V DO204AR

0

SMCJ220E3/TR13

SMCJ220E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 220V DO214AB

0

MXLSMBG13AE3

MXLSMBG13AE3

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V DO215AA

0

MA15KP110CA

MA15KP110CA

Roving Networks / Microchip Technology

TVS DIODE 110V 178V DO204AR

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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