TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MSMLG12A

MSMLG12A

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V DO215AB

0

MSMBJ30CAE3

MSMBJ30CAE3

Roving Networks / Microchip Technology

TVS DIODE 30V 48.4V DO214AA

0

MXRT100KP78CA

MXRT100KP78CA

Roving Networks / Microchip Technology

TVS DIODE 78V 153V CASE 5A

0

MXSMCJ43AE3

MXSMCJ43AE3

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO214AB

0

MXSMBJ43CAE3

MXSMBJ43CAE3

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO214AA

0

MASMLJ110CAE3

MASMLJ110CAE3

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AB

0

MXLSMBG160A

MXLSMBG160A

Roving Networks / Microchip Technology

TVS DIODE 160V 259V DO215AA

0

MXSMCJ51A

MXSMCJ51A

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO214AB

0

SMDB05E3/TR7

SMDB05E3/TR7

Roving Networks / Microchip Technology

TVS DIODE 5V 11V 8SO

0

MASMCJ15CA

MASMCJ15CA

Roving Networks / Microchip Technology

TVS DIODE 15V 24.4V DO214AB

0

MSMBJ36CA

MSMBJ36CA

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO214AA

0

SMBJ220CAE3/TR13

SMBJ220CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 220V DO214AA

0

SMAJ12CE3/TR13

SMAJ12CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 12V 22V DO214AC

0

MXL5KP10CAE3

MXL5KP10CAE3

Roving Networks / Microchip Technology

TVS DIODE 10V 17V CASE 5A

0

MSMCJ130CAE3

MSMCJ130CAE3

Roving Networks / Microchip Technology

TVS DIODE 130V 209V DO214AB

0

SMDB24/TR7

SMDB24/TR7

Roving Networks / Microchip Technology

TVS DIODE 24V 43V 8SO

3

MSMCG85AE3

MSMCG85AE3

Roving Networks / Microchip Technology

TVS DIODE 85V 137V DO215AB

0

SMDA15C-5E3/TR7

SMDA15C-5E3/TR7

Roving Networks / Microchip Technology

TVS DIODE 15V 30V 8SO

0

MSMBJ9.0CA

MSMBJ9.0CA

Roving Networks / Microchip Technology

TVS DIODE 9V 15.4V DO214AA

100

MXLSMCJ60CA

MXLSMCJ60CA

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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