TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXL5KP8.0CA

MXL5KP8.0CA

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V CASE 5A

0

MXSMBG17A

MXSMBG17A

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO215AA

0

MXLP4KE400CA

MXLP4KE400CA

Roving Networks / Microchip Technology

TVS DIODE 342V 548V DO204AL

0

MXLSMCJLCE80AE3

MXLSMCJLCE80AE3

Roving Networks / Microchip Technology

TVS DIODE 80V 129V DO214AB

0

MRT100KP170CAE3

MRT100KP170CAE3

Roving Networks / Microchip Technology

TVS DIODE 170V 334V CASE 5A

0

MXLSMLJ6.0AE3

MXLSMLJ6.0AE3

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO214AB

0

MSMCG64A

MSMCG64A

Roving Networks / Microchip Technology

TVS DIODE 64V 103V DO215AB

94

MXRT100KP150CA

MXRT100KP150CA

Roving Networks / Microchip Technology

TVS DIODE 150V 296V CASE 5A

0

MPLAD30KP48AE3

MPLAD30KP48AE3

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V PLAD

0

MXSMBG8.0CA

MXSMBG8.0CA

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V DO215AA

0

SMCJ16CAE3/TR13

SMCJ16CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 16V 26V DO214AB

0

MART100KP58A

MART100KP58A

Roving Networks / Microchip Technology

TVS DIODE 58V 114V CASE 5A

0

SMCJ85CE3/TR13

SMCJ85CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 85V 151V DO214AB

0

MXSMLJ36AE3

MXSMLJ36AE3

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO214AB

0

MXLSMCJ85CA

MXLSMCJ85CA

Roving Networks / Microchip Technology

TVS DIODE 85V 137V DO214AB

0

MSMCG43CA

MSMCG43CA

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO215AB

424

MXSMLJ64A

MXSMLJ64A

Roving Networks / Microchip Technology

TVS DIODE 64V 103V DO214AB

0

MP4KE91CAE3

MP4KE91CAE3

Roving Networks / Microchip Technology

TVS DIODE 77.8V 125V DO204AL

0

MXL15KP45AE3

MXL15KP45AE3

Roving Networks / Microchip Technology

TVS DIODE 45V 73V CASE 5A

0

MPLAD30KP14AE3

MPLAD30KP14AE3

Roving Networks / Microchip Technology

TVS DIODE 14V 24V PLAD

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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