TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JANTXV1N6166A

JANTXV1N6166A

Roving Networks / Microchip Technology

TVS DIODE 76V 137.6V C AXIAL

0

MA15KP51CA

MA15KP51CA

Roving Networks / Microchip Technology

TVS DIODE 51V 82.8V DO204AR

0

MSMBJ75CA

MSMBJ75CA

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AA

0

MA15KP24A

MA15KP24A

Roving Networks / Microchip Technology

TVS DIODE 24V 40.7V DO204AR

0

MPLAD15KP13CAE3

MPLAD15KP13CAE3

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V PLAD

0

MP4KE6.8CA

MP4KE6.8CA

Roving Networks / Microchip Technology

TVS DIODE 5.8V 10.5V DO204AL

0

MSMBJ48A

MSMBJ48A

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO214AA

0

MXSMBJ8.5AE3

MXSMBJ8.5AE3

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO214AA

0

SM16LC08/TR13

SM16LC08/TR13

Roving Networks / Microchip Technology

TVS DIODE 8V 16SO

0

MASMCJ70AE3

MASMCJ70AE3

Roving Networks / Microchip Technology

TVS DIODE 70V 113V DO214AB

0

MXRT100KP120CAE3

MXRT100KP120CAE3

Roving Networks / Microchip Technology

TVS DIODE 120V 235V CASE 5A

0

MSMBJ60A

MSMBJ60A

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AA

208

MART100KP250CA

MART100KP250CA

Roving Networks / Microchip Technology

TVS DIODE 250V 493V CASE 5A

0

MXLSMBG40AE3

MXLSMBG40AE3

Roving Networks / Microchip Technology

TVS DIODE 40V 64.5V DO215AA

0

MASMLJ45CAE3

MASMLJ45CAE3

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AB

0

M5KP100A

M5KP100A

Roving Networks / Microchip Technology

TVS DIODE 100V 162V DO204AR

129

MX15KP48AE3

MX15KP48AE3

Roving Networks / Microchip Technology

TVS DIODE 48V 77.7V CASE 5A

0

MSMCJ58AE3

MSMCJ58AE3

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO214AB

0

MAP4KE51CAE3

MAP4KE51CAE3

Roving Networks / Microchip Technology

TVS DIODE 43.6V 70.1V DO204AL

0

MASMBG85CAE3

MASMBG85CAE3

Roving Networks / Microchip Technology

TVS DIODE 85V 137V DO215AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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