TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXLP4KE10CA

MXLP4KE10CA

Roving Networks / Microchip Technology

TVS DIODE 8.55V 14.5V DO204AL

0

MXSMBG11AE3

MXSMBG11AE3

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V DO215AA

0

MX15KP33CA

MX15KP33CA

Roving Networks / Microchip Technology

TVS DIODE 33V 54.8V CASE 5A

0

SMBJ110AE3/TR13

SMBJ110AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AA

0

MASMCJ54AE3

MASMCJ54AE3

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AB

0

MX5KP36CA

MX5KP36CA

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V CASE 5A

0

MXSMBJ10CA

MXSMBJ10CA

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO214AA

0

MASMCJ26CAE3

MASMCJ26CAE3

Roving Networks / Microchip Technology

TVS DIODE 26V 42.1V DO214AB

0

MXSMLJ33A

MXSMLJ33A

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO214AB

0

MSMBG12CAE3

MSMBG12CAE3

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V DO215AA

0

MAP4KE100CA

MAP4KE100CA

Roving Networks / Microchip Technology

TVS DIODE 85.5V 137V DO204AL

0

UPTB8/TR13

UPTB8/TR13

Roving Networks / Microchip Technology

TVS DIODE 8V 13.7V POWERMITE 1

0

SMLJ220AE3/TR13

SMLJ220AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 220V DO214AB

0

MSMLJ48CA

MSMLJ48CA

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO214AB

0

MSMBJSAC7.0E3

MSMBJSAC7.0E3

Roving Networks / Microchip Technology

TVS DIODE 7V 12.6V DO214AA

0

MSMBJ11A

MSMBJ11A

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V DO214AA

0

MASMCJLCE20A

MASMCJLCE20A

Roving Networks / Microchip Technology

TVS DIODE 20V 32.4V DO214AB

0

MAP4KE68A

MAP4KE68A

Roving Networks / Microchip Technology

TVS DIODE 58.1V 92V DO204AL

0

MXLSMBG120A

MXLSMBG120A

Roving Networks / Microchip Technology

TVS DIODE 120V 193V DO215AA

0

UPTB12E3/TR7

UPTB12E3/TR7

Roving Networks / Microchip Technology

TVS DIODE 12V 21.6V POWERMITE 1

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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