TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMCJ51E3/TR13

SMCJ51E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 51V 91.1V DO214AB

0

MXRT100KP180AE3

MXRT100KP180AE3

Roving Networks / Microchip Technology

TVS DIODE 180V 354V CASE 5A

0

MPLAD30KP15CAE3

MPLAD30KP15CAE3

Roving Networks / Microchip Technology

TVS DIODE 15V 25.8V PLAD

0

MXSMBG36CA

MXSMBG36CA

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO215AA

0

MART100KP280CA

MART100KP280CA

Roving Networks / Microchip Technology

TVS DIODE 280V 552V CASE 5A

0

M15KP78A

M15KP78A

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO204AR

0

MRT100KP400A

MRT100KP400A

Roving Networks / Microchip Technology

TVS DIODE 400V 787V CASE 5A

0

MXL15KP90CAE3

MXL15KP90CAE3

Roving Networks / Microchip Technology

TVS DIODE 90V 146V CASE 5A

0

MA5KP51A

MA5KP51A

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO204AR

0

SMCJ440CE3/TR13

SMCJ440CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 440V DO214AB

0

MXSMCJ51CAE3

MXSMCJ51CAE3

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO214AB

0

MASMCJ51CAE3

MASMCJ51CAE3

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO214AB

0

SMLJ33CAE3/TR13

SMLJ33CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO214AB

0

M5KP28AE3

M5KP28AE3

Roving Networks / Microchip Technology

TVS DIODE 28V 45.5V DO204AR

0

MSMBJSAC18E3

MSMBJSAC18E3

Roving Networks / Microchip Technology

TVS DIODE 18V 28.8V DO214AA

0

SM8LC15E3/TR13

SM8LC15E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 15V 30V 8SO

0

MSMCJLCE120AE3

MSMCJLCE120AE3

Roving Networks / Microchip Technology

TVS DIODE 120V 193V DO214AB

0

MXLSMLJ78CAE3

MXLSMLJ78CAE3

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO214AB

0

SMLJ70E3/TR13

SMLJ70E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 70V 125V DO214AB

0

MPLAD6.5KP33CAE3

MPLAD6.5KP33CAE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V PLAD

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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