TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXP4KE62CAE3

MXP4KE62CAE3

Roving Networks / Microchip Technology

TVS DIODE 53V 85V DO204AL

0

MXSMCJ45AE3

MXSMCJ45AE3

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AB

0

JANTX1N6464US

JANTX1N6464US

Roving Networks / Microchip Technology

TVS DIODE 15V 26.5V B SQ-MELF

0

MAP4KE180AE3

MAP4KE180AE3

Roving Networks / Microchip Technology

TVS DIODE 154V 246V DO204AL

0

MX5KP51CAE3

MX5KP51CAE3

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V CASE 5A

0

MASMCJLCE10A

MASMCJLCE10A

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO214AB

0

MASMLJ43CA

MASMLJ43CA

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO214AB

0

M15KP280CAE3

M15KP280CAE3

Roving Networks / Microchip Technology

TVS DIODE 280V 452V DO204AR

0

MX5KP78A

MX5KP78A

Roving Networks / Microchip Technology

TVS DIODE 78V 126V CASE 5A

0

MXSMLJ7.5A

MXSMLJ7.5A

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO214AB

0

MASMBG33AE3

MASMBG33AE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO215AA

0

MASMBJ11CA

MASMBJ11CA

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V DO214AA

0

MSMCJLCE8.5A

MSMCJLCE8.5A

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO214AB

0

MSMCJ15CAE3

MSMCJ15CAE3

Roving Networks / Microchip Technology

TVS DIODE 15V 24.4V DO214AB

0

SMAJ51E3/TR13

SMAJ51E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 51V 91.1V DO214AC

0

MSMLJ110AE3

MSMLJ110AE3

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AB

0

SMLJ48CE3/TR13

SMLJ48CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 48V 85.5V DO214AB

0

MPLAD30KP100CA

MPLAD30KP100CA

Roving Networks / Microchip Technology

TVS DIODE 100V 162V PLAD

0

MXRT100KP220CAE3

MXRT100KP220CAE3

Roving Networks / Microchip Technology

TVS DIODE 220V 434V CASE 5A

0

MXLP4KE62A

MXLP4KE62A

Roving Networks / Microchip Technology

TVS DIODE 53V 85V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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