TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JAN1N6148A

JAN1N6148A

Roving Networks / Microchip Technology

TVS DIODE 13.7V 25.1V C AXIAL

0

MSMLJ60A

MSMLJ60A

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AB

0

SMDA24C/TR13

SMDA24C/TR13

Roving Networks / Microchip Technology

TVS DIODE 24V 43V 8SO

0

MASMBG8.0AE3

MASMBG8.0AE3

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V DO215AA

0

MAP4KE220CA

MAP4KE220CA

Roving Networks / Microchip Technology

TVS DIODE 185V 328V DO204AL

0

JANTXV1N6122AUS

JANTXV1N6122AUS

Roving Networks / Microchip Technology

TVS DIODE 35.8V 64.6V B SQ-MELF

0

MSMBJ12A

MSMBJ12A

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V DO214AA

0

SMAJ9.0AE3/TR13

SMAJ9.0AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 9V 15.4V DO214AC

0

SM8LC05/TR13

SM8LC05/TR13

Roving Networks / Microchip Technology

TVS DIODE 5V 11V 8SO

1775

MSMCJ160CA

MSMCJ160CA

Roving Networks / Microchip Technology

TVS DIODE 160V 259V DO214AB

0

MA5KP7.5CA

MA5KP7.5CA

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO204AR

0

JANTXV1N6131AUS

JANTXV1N6131AUS

Roving Networks / Microchip Technology

TVS DIODE 86.6V 151.3V B SQ-MELF

0

MP4KE39AE3

MP4KE39AE3

Roving Networks / Microchip Technology

TVS DIODE 33.3V 53.9V DO204AL

0

MXLSMCJ6.5A

MXLSMCJ6.5A

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V DO214AB

0

M15KP78CAE3

M15KP78CAE3

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO204AR

0

MA15KP64A

MA15KP64A

Roving Networks / Microchip Technology

TVS DIODE 64V 104V DO204AR

0

MSMCJ12CA

MSMCJ12CA

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V DO214AB

0

MXRT100KP260AE3

MXRT100KP260AE3

Roving Networks / Microchip Technology

TVS DIODE 260V 512V CASE 5A

0

SM16LC15/TR13

SM16LC15/TR13

Roving Networks / Microchip Technology

TVS DIODE 15V 30V 16SO

737

MSMBG30CAE3

MSMBG30CAE3

Roving Networks / Microchip Technology

TVS DIODE 30V 48.4V DO215AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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