TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MA5KP16CAE3

MA5KP16CAE3

Roving Networks / Microchip Technology

TVS DIODE 16V 26V DO204AR

0

MXLSMBG6.0A

MXLSMBG6.0A

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO215AA

0

MXSMBJ33AE3

MXSMBJ33AE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO214AA

0

MXLSMLJ28A

MXLSMLJ28A

Roving Networks / Microchip Technology

TVS DIODE 28V 45.4V DO214AB

0

UPTB8E3/TR13

UPTB8E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 8V 13.7V POWERMITE 1

0

MSMBJ6.0AE3

MSMBJ6.0AE3

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO214AA

0

MSMBG36CA

MSMBG36CA

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO215AA

0

UPT15/TR13

UPT15/TR13

Roving Networks / Microchip Technology

TVS DIODE 15V 26V POWERMITE 1

0

MXL15KP78CA

MXL15KP78CA

Roving Networks / Microchip Technology

TVS DIODE 78V 126V CASE 5A

0

MXSMBG13CAE3

MXSMBG13CAE3

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V DO215AA

0

MSMBG11A

MSMBG11A

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V DO215AA

0

UPTB33E3/TR7

UPTB33E3/TR7

Roving Networks / Microchip Technology

TVS DIODE 33V 56.7V POWERMITE 1

0

MXLP4KE27CA

MXLP4KE27CA

Roving Networks / Microchip Technology

TVS DIODE 23.1V 37.5V DO204AL

0

MSMBG11CAE3

MSMBG11CAE3

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V DO215AA

0

MXLRT100KP45CAE3

MXLRT100KP45CAE3

Roving Networks / Microchip Technology

TVS DIODE 45V 88.5V CASE 5A

0

MXL15KP26CAE3

MXL15KP26CAE3

Roving Networks / Microchip Technology

TVS DIODE 26V 44V CASE 5A

0

MX15KP150CA

MX15KP150CA

Roving Networks / Microchip Technology

TVS DIODE 150V 243V CASE 5A

0

SMAJ90CAE3/TR13

SMAJ90CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 90V 146V DO214AC

0

MX5KP11CAE3

MX5KP11CAE3

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V CASE 5A

0

SMCJ36CE3/TR13

SMCJ36CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 36V 64.3V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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