TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SA64CAHR0G

SA64CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 64V 103V DO204AC

0

SMCJ22AHR7G

SMCJ22AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AB

0

BZW04-14HR1G

BZW04-14HR1G

TSC (Taiwan Semiconductor)

TVS DIODE 13.6V 22.5V DO204AL

0

SMAJ33CA R3G

SMAJ33CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 33V 53.3V DO214AC

2142

SMAJ120AHR3G

SMAJ120AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 120V 193V DO214AC

2750

SMBJ170AHR5G

SMBJ170AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 170V 275V DO214AA

0

SMCJ40CAHR7G

SMCJ40CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 40V 64.5V DO214AB

0

SMB10J33A M4G

SMB10J33A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 33V 53.3V DO214AA

0

P6KE47CA A0G

P6KE47CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 40.2V 64.8V DO204AC

0

BZW06-13 R0G

BZW06-13 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 27.2V DO204AC

0

1KSMB10CA R5G

1KSMB10CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO214AA

0

P6KE30A R0G

P6KE30A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO204AC

0

SMB10J22CA R5G

SMB10J22CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AA

957

P6KE9.1AHB0G

P6KE9.1AHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO204AC

0

SMCJ22CAHR7G

SMCJ22CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AB

0

1KSMB18CAHM4G

1KSMB18CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 15.3V 25.5V DO214AA

0

P6SMB51A M4G

P6SMB51A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 43.6V 70.1V DO214AA

0

PGSMAJ20AHR3G

PGSMAJ20AHR3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

SMF48A RVG

SMF48A RVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

5590

1.5SMC12A R7G

1.5SMC12A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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