TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SA30CA B0G

SA30CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 64.3V DO204AC

0

1.5KE16CA R0G

1.5KE16CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 13.6V 22.5V DO201

0

SMAJ70CAHR3G

SMAJ70CAHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 70V 113V DO214AC

3174

PGSMAJ48CAHE3G

PGSMAJ48CAHE3G

TSC (Taiwan Semiconductor)

DIODE, TVS, BIDIRECTIONAL

3400

P6SMB180A M4G

P6SMB180A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 154V 246V DO214AA

0

SMAJ78CA R3G

SMAJ78CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 78V 126V DO214AC

0

SMCJ12CA V6G

SMCJ12CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AB

0

SMAJ30CAHR3G

SMAJ30CAHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 48.4V DO214AC

1735

1.5KE400AHR0G

1.5KE400AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO201

0

BZW04-8V5B R0G

BZW04-8V5B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO204AL

0

SMF33AHRQG

SMF33AHRQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

1.5SMC150AHR7G

1.5SMC150AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 128V 207V DO214AB

0

P6SMB20AHR5G

P6SMB20AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO214AA

0

1KSMB30CAHM4G

1KSMB30CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO214AA

0

SMBJ70AHM4G

SMBJ70AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 70V 113V DO214AA

0

P6KE350CA A0G

P6KE350CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 300V 482V DO204AC

5409

SMF26A RQG

SMF26A RQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

BZW04-239HR0G

BZW04-239HR0G

TSC (Taiwan Semiconductor)

TVS DIODE 239V 384V DO204AL

0

SA6.0AHR0G

SA6.0AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 6V 10.3V DO204AC

0

P4SMA13AHR3G

P4SMA13AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 11.1V 18.2V DO214AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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