TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1.5KE36CAHR0G

1.5KE36CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO201

0

P6KE11CAHR0G

P6KE11CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 9.4V 15.6V DO204AC

0

P6SMB91A M4G

P6SMB91A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 77.8V 125V DO214AA

0

P4SMA7.5CAHR3G

P4SMA7.5CAHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 6.4V 11.3V DO214AC

0

SMAJ100A M2G

SMAJ100A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 100V 162V DO214AC

0

P4KE10A R1G

P4KE10A R1G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO204AL

0

1V5KE11A

1V5KE11A

TSC (Taiwan Semiconductor)

TVS DIODE 9.4V 15.6V DO201AE

0

1.5KE20CA R0G

1.5KE20CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO201

0

P6SMB75AHR5G

P6SMB75AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO214AA

0

P4SMA62A R3G

P4SMA62A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 53V 85V DO214AC

0

P6KE110CA R0G

P6KE110CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 94V 152V DO204AC

0

P6SMB7.5CA R5G

P6SMB7.5CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 6.4V 11.3V DO214AA

0

BZW06-213B R0G

BZW06-213B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 213V 442V DO204AC

0

SA5.0CA B0G

SA5.0CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 5V 9.2V DO204AC

0

BZW04-171BHR1G

BZW04-171BHR1G

TSC (Taiwan Semiconductor)

TVS DIODE 171V 274V DO204AL

0

SMAJ28CA M2G

SMAJ28CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AC

0

SA7.0A R0G

SA7.0A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 7V 12V DO204AC

0

SMBJ48A R5G

SMBJ48A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AA

840

SMCJ8.5CA R7G

SMCJ8.5CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 8.5V 14.4V DO214AB

0

1KSMB11AHR5G

1KSMB11AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 9.4V 15.6V DO214AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top