TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1KSMB12CA M4G

1KSMB12CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO214AA

0

P4KE150CA R1G

P4KE150CA R1G

TSC (Taiwan Semiconductor)

TVS DIODE 128V 207V DO204AL

0

P4KE12A R0G

P4KE12A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO204AL

0

1.5KE27AHR0G

1.5KE27AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 23.1V 37.5V DO201

0

SMCJ9.0CAHR7G

SMCJ9.0CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 9V 15.4V DO214AB

0

P6SMB33A M4G

P6SMB33A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO214AA

0

SMCJ48CAHR7G

SMCJ48CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AB

0

SMB10J10A M4G

SMB10J10A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 10V 17V DO214AA

0

P6SMB130AHM4G

P6SMB130AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 111V 179V DO214AA

0

SMCJ12A M6G

SMCJ12A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AB

0

BZW04-64 R0G

BZW04-64 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO204AL

0

P6KE12CAHR0G

P6KE12CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO204AC

0

SA130A A0G

SA130A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 130V 209V DO204AC

0

SMB10J14CAHM4G

SMB10J14CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 14V 23.2V DO214AA

0

SMBJ51AHR5G

SMBJ51AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 51V 82.4V DO214AA

0

SMCJ28AHR7G

SMCJ28AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AB

0

SA5.0A R0G

SA5.0A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 5V 9.2V DO204AC

0

P4SMA82A M2G

P4SMA82A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO214AC

0

SMB10J24CA M4G

SMB10J24CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 24V 38.9V DO214AA

0

SMAJ160CAHM2G

SMAJ160CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 160V 259V DO214AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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