TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JTXV1N6463US

JTXV1N6463US

Semtech

T UNI 500W SM

0

JAN1N6167AUS

JAN1N6167AUS

Semtech

TVS BI 1500W 104.5V SM

0

JTX1N6102A

JTX1N6102A

Semtech

T MET BI 500W 6V8 19500/516

0

JTX1N6121US

JTX1N6121US

Semtech

TVS BI 500W 38.7V SM

0

RCLAMP0524T.TCT

RCLAMP0524T.TCT

Semtech

TVS DIODE 5V 15V SLP2510P8T

0

JAN1N6156AUS

JAN1N6156AUS

Semtech

TVS BI 1500W 37.1V SM

0

JTXV1N6110AUS

JTXV1N6110AUS

Semtech

T MET BI 500W 15V

0

1N6154US

1N6154US

Semtech

TVS DIODE 25.1V 47.9V

0

JTX1N6113AUS

JTX1N6113AUS

Semtech

T MET BI 500W 20V SM

0

JTX1N6159A

JTX1N6159A

Semtech

T MET BI 1500W

0

1N6150US

1N6150US

Semtech

TVS DIODE 16.7V 31.9V

0

JTX1N6104A

JTX1N6104A

Semtech

T MET BI 500W 8V2

0

JTX1N6148

JTX1N6148

Semtech

T MET BI 1500W

0

JTX1N6141A

JTX1N6141A

Semtech

T MET BI 1500W 9V1

0

JTX1N6463

JTX1N6463

Semtech

T UNI 500W 12V

0

JTX1N6117A

JTX1N6117A

Semtech

T MET BI 500W 30V

0

1N6142US

1N6142US

Semtech

TVS DIODE 15.2VC 98.7A IPP

0

JTX1N6110

JTX1N6110

Semtech

T MET BI 500W 15V

0

RCLAMP7538P.TZT

RCLAMP7538P.TZT

Semtech

TVS 8LINE LOW CAP SGP3810N9

0

JTXV1N6463

JTXV1N6463

Semtech

TVS

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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