TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JTX1N6165

JTX1N6165

Semtech

T MET BI 1500W

0

JTXV1N6138AUS

JTXV1N6138AUS

Semtech

T MET BI 1500W SM

0

JTXV1N6171

JTXV1N6171

Semtech

T MET BI 1500W

0

UCLAMP0502P.TCT

UCLAMP0502P.TCT

Semtech

TVS DIODE 5V 12.5V SLP1006P3

0

1N6168US

1N6168US

Semtech

TVS DIODE 91.2V 172.9V

0

1N6470

1N6470

Semtech

TVS DIODE 6V 11V AXIAL

0

1N6146US

1N6146US

Semtech

TVS DIODE 11.4V 21.9V

0

JTXV1N6165

JTXV1N6165

Semtech

T MET BI 1500W

0

UCLAMP4014P.TNT

UCLAMP4014P.TNT

Semtech

TVS DIODE

0

JAN1N6157AUS

JAN1N6157AUS

Semtech

TVS BI 1500W 40.9V SM

0

JTXV1N6127

JTXV1N6127

Semtech

T MET BI 500W 75V

0

JAN1N6102AUS

JAN1N6102AUS

Semtech

TVS BI 500W 6.46V SM

0

1N6147US

1N6147US

Semtech

TVS DIODE 12.2V 23.4V

0

JTXV1N6109

JTXV1N6109

Semtech

T MET BI 500W 13V

0

JTX1N6126US

JTX1N6126US

Semtech

T MET BI 500W 61.2V SM

0

JTXV1N6121A

JTXV1N6121A

Semtech

T MET BI 500W 43V

0

JAN1N6147AUS

JAN1N6147AUS

Semtech

TVS BI 1500W 15.2V SM

0

JTXV1N6117AUS

JTXV1N6117AUS

Semtech

T MET BI 500W 30V

0

JTX1N6138US

JTX1N6138US

Semtech

TVS BI 1500W 6.12V SM

0

JAN1N6142AUS

JAN1N6142AUS

Semtech

TVS BI 1500W 9.5V SM

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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