TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JTX1N6137AUS

JTX1N6137AUS

Semtech

T MET BI 500W 200V

0

JTX1N6162A

JTX1N6162A

Semtech

T MET BI 1500W

0

JTXV1N6148

JTXV1N6148

Semtech

T MET BI 1500W

0

JTX1N6172

JTX1N6172

Semtech

T MET BI 1500W

0

JTX1N6155AUS

JTX1N6155AUS

Semtech

T MET BI 1500W

0

JAN1N6149AUS

JAN1N6149AUS

Semtech

TVS BI 1500W 19V SM

0

JTX1N6156AUS

JTX1N6156AUS

Semtech

T MET BI 1500W 39V SM

0

JTXV1N6134A

JTXV1N6134A

Semtech

T MET BI 500W 150V

0

1N6152AUS

1N6152AUS

Semtech

TVS DIODE 20.6V 37.4V

0

1N6166AUS

1N6166AUS

Semtech

TVS DIODE 76V 137.6V

0

1N6153US

1N6153US

Semtech

TVS DIODE 22.8V 43.6V

0

JTXV1N6106

JTXV1N6106

Semtech

T MET BI 500W 10V

0

JTX1N6140US

JTX1N6140US

Semtech

TVS BI 1500W 7.38V SM

0

JTX1N6160

JTX1N6160

Semtech

T MET BI 1500W

0

JTX1N6106

JTX1N6106

Semtech

T MET BI 500W 10V

0

1N6167AUS

1N6167AUS

Semtech

TVS DIODE 83.6V 151.3V

0

1N6143US

1N6143US

Semtech

TVS DIODE 8.4V 16.3V

0

JTX1N6153AUS

JTX1N6153AUS

Semtech

T MET BI 1500W 22.8V SM

0

1N6140AUS

1N6140AUS

Semtech

TVS DIODE 6.2V 12.1V

0

JTX1N6124

JTX1N6124

Semtech

T MET BI 500W 56V

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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