TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1N6141

1N6141

Semtech

TVS DIODE 6.9V 14V AXIAL

0

JTX1N6137

JTX1N6137

Semtech

T MET BI 500W 200V

0

JTX1N6165A

JTX1N6165A

Semtech

T MET BI 1500W

0

JAN1N6165AUS

JAN1N6165AUS

Semtech

TVS BI 1500W 86.5V SM

0

1N6102AUS

1N6102AUS

Semtech

TVS DIODE 5.2V 11V

0

JTX1N6115

JTX1N6115

Semtech

T MET BI 500W 24V

0

JTX1N6117

JTX1N6117

Semtech

T MET BI 500W 30V

0

1N6474

1N6474

Semtech

TVS DIODE 30.5V 47.5V AXIAL

0

JTX1N6141

JTX1N6141

Semtech

T MET BI 1500W 9V1 19500/516

0

JTX1N6115AUS

JTX1N6115AUS

Semtech

T MET BI 500W 22.8V

0

1N6156AUS

1N6156AUS

Semtech

TVS DIODE 5.2V 53.6V

0

JTX1N6120

JTX1N6120

Semtech

T MET BI 500W 39V

0

JTX1N6130

JTX1N6130

Semtech

T MET BI 500W 100V

0

RCLAMP0532T.TCT

RCLAMP0532T.TCT

Semtech

TVS DIODE 5V 10V SLP1610P4T

0

1N6149US

1N6149US

Semtech

TVS DIODE 51.2V 29V

0

JTXV1N6133

JTXV1N6133

Semtech

T MET BI 500W 130V

0

JAN1N6171AUS

JAN1N6171AUS

Semtech

TVS BI 1500W 152V SM

0

JTXV1N6170AUS

JTXV1N6170AUS

Semtech

T MET BI 1500W 150V SM

0

JTXV1N6465US

JTXV1N6465US

Semtech

T UNI 500W

0

JTX1N6169US

JTX1N6169US

Semtech

TVS BI 1500W 117V SM

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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