Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
MTD3910G2

MTD3910G2

Marktech Optoelectronics

PHOTODIODE

0

PDB-C204F

PDB-C204F

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO233AA

0

PDU-C109

PDU-C109

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE TO233AA

0

PDB-C520-SMA

PDB-C520-SMA

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE BLUE FIBER OPTIC SMA

0

4503A

4503A

MITEQ, Inc.(L3 Narda-MITEQ)

DETECTOR ASSY

0

PDV-V404

PDV-V404

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 550NM TO5

0

OP910

OP910

TT Electronics / Optek Technology

SENSOR PHOTODIODE 885NM TO46

0

PDI-G103L

PDI-G103L

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM TO46-2

0

PDB-C520-FCF

PDB-C520-FCF

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE BLUE FIBER OPTIC FCF

0

PDB-C617-1

PDB-C617-1

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM DIE

0

PDB-C520-FC

PDB-C520-FC

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE BLUE FIBER OPTIC FC

0

BS100C

BS100C

Sharp Microelectronics

SENSOR PHOTODIODE 560NM SIDE

0

PDB-705

PDB-705

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO39

0

PDU-V106

PDU-V106

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE UV 10.00MM SQ TO-5

0

PDU-V114Q

PDU-V114Q

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE UV W/QW 17.74MM TO-5

0

SFH 205 F AN23

SFH 205 F AN23

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 950NM RADIAL

0

PDV-V417

PDV-V417

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE RADIAL

0

LPD3035

LPD3035

Broadcom

SENSOR PHOTODIODE 1625NM DIE

0

PDB-V605-3

PDB-V605-3

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM BUSS

0

PDU-V115Q

PDU-V115Q

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE UV W/QW 5.07MM TO-5

0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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