Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
PDU-C102

PDU-C102

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE TO46-2

0

UV-245BQH

UV-245BQH

Excelitas Technologies

PIN PHOTODIODE UV TO-5

0

P850-3180-4GPIN

P850-3180-4GPIN

Finisar Corporation

SENSOR PHOTODIODE

0

PDB-C137

PDB-C137

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM RADIAL

0

PDB-C132

PDB-C132

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM RADIAL

0

PDI-V488

PDI-V488

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 880NM TO5

0

PDU-V119Q

PDU-V119Q

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE UV W/QW 7.95MM SQ TO5

0

HELIX-954 CD3540

HELIX-954 CD3540

Excelitas Technologies

SENSOR PHOTODIODE MODULE

0

PDI-V488-46

PDI-V488-46

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 880NM TO46-2

0

PDB-C102

PDB-C102

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO46-2

0

QSE973RCE3R0

QSE973RCE3R0

Sanyo Semiconductor/ON Semiconductor

PHOTODIODE SIDELOOKER PIN TO-92

0

PDU-C114

PDU-C114

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE UV 17.74MM SQ TO-5

0

BPV21F

BPV21F

Vishay / Semiconductor - Opto Division

SENSOR PHOTODIODE 950NM TO226-2

0

KLI-4104-RAA-CP-AA

KLI-4104-RAA-CP-AA

Sanyo Semiconductor/ON Semiconductor

IMAGE SENSOR CCD LIN RGB 46CDIP

0

PDI-C105-F

PDI-C105-F

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO5

0

PDB-V448

PDB-V448

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 488NM TO5

0

PDU-C113

PDU-C113

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 2DIP MODULE

0

PDU-C119

PDU-C119

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE UV 7.95MM SQ TO-5

0

MTPD1346C-080

MTPD1346C-080

Marktech Optoelectronics

PHOTO DETECTOR 0.8MM TO-46

0

PDV-V419

PDV-V419

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE RADIAL

0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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