Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
PDB-V615-1

PDB-V615-1

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM DIE

0

PDB-V102

PDB-V102

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO46-2

0

PDB-V440-46B

PDB-V440-46B

Luna Optoelectronics (Advanced Photonix)

PHOTO DIODE TO-46 4NANO METERS

0

PDI-V490-46

PDI-V490-46

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 900NM TO46

0

SFH450V

SFH450V

IR (Infineon Technologies)

HOUSING CONNECTOR DIODE PLASTIC

0

PDB-V607-3

PDB-V607-3

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM BUSS

0

AXUVHS6

AXUVHS6

Opto Diode Corporation

SENSOR ELECTRON DETECTION

0

LTR-546AB

LTR-546AB

Lite-On, Inc.

SENSOR PHOTODIODE 900NM RADIAL

0

PDV-V405-46

PDV-V405-46

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 500NM TO46-2

0

PDB-C131

PDB-C131

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM RADIAL

0

PDR-V466-46

PDR-V466-46

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO46-2

0

PDB-V104-IL

PDB-V104-IL

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO46-3

0

PDB-C154SMF

PDB-C154SMF

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM 1210

0

PDB-V611-2

PDB-V611-2

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM PVC WIRE

0

PDB-V101

PDB-V101

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO46-2

0

PDU-C108Q

PDU-C108Q

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE TO233AA

0

PDB-C166

PDB-C166

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM CERAMIC

0

PDB-C503-FCF

PDB-C503-FCF

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM

0

SFH 2240D

SFH 2240D

OSRAM Opto Semiconductors, Inc.

PIN DIODE TOPLED D5140 SMD

0

SFH 203 PFA RN18A

SFH 203 PFA RN18A

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM RADIAL

0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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