PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC27517ADBVR

UCC27517ADBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

4

LM5111-1M/NOPB

LM5111-1M/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

19939975

LM2722MX/NOPB

LM2722MX/NOPB

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER,

0

UC3710DWTR

UC3710DWTR

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

1000

UCC27200ADDA

UCC27200ADDA

Texas Instruments

UCC27200A 120-V BOOT, 3-A PEAK,

11625

UCC27531DBVR

UCC27531DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

8663

LM5060MM/NOPB

LM5060MM/NOPB

Texas Instruments

IC GATE DRVR HIGH-SIDE 10VSSOP

0

UCC27211DDAR

UCC27211DDAR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

1450

LM5111-1MY/NOPB

LM5111-1MY/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

6791

UCC27710DR

UCC27710DR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

2337

TPS28225DR

TPS28225DR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

2991

UCC27533DBVR

UCC27533DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

5391

UCC27201ADPRT

UCC27201ADPRT

Texas Instruments

UCC27201A 120V BOOT, 3-A PEAK, H

6271

UC3710T

UC3710T

Texas Instruments

IC GATE DRVR LOW-SIDE TO220-5

1458

TPS2815D

TPS2815D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

43

UCC21530DWKR

UCC21530DWKR

Texas Instruments

IC GATE DRVR ISOLATED

1427

UCC27200D

UCC27200D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

293

UC1714J

UC1714J

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

105

LM5110-2MX/NOPB

LM5110-2MX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

3396

LM5100ASD/NOPB

LM5100ASD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

1022

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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