PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UC2709DW

UC2709DW

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

65

LM5110-2M/NOPB

LM5110-2M/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

9125

UCC27538DBVT

UCC27538DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

401

UCC27211DDA

UCC27211DDA

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

157

TPS2813D

TPS2813D

Texas Instruments

TPS2813 COMPLEMENTARY DUAL HIGH-

29781

UCC27324D

UCC27324D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

24

UCC27512DRSR

UCC27512DRSR

Texas Instruments

IC GATE DRVR LOW-SIDE 6SON

1662

TPS2829DBVTG4

TPS2829DBVTG4

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

0

LM5104SD/NOPB

LM5104SD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

3994

UCC27519AQDBVRQ1

UCC27519AQDBVRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

3336

UCC27210DRMT

UCC27210DRMT

Texas Instruments

UCC27210 120V BOOT, 4A PEAK, HIG

997

UCC27531DBVT

UCC27531DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

2096

LM5110-2SD/NOPB

LM5110-2SD/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 10WSON

946

LM5110-1M/NOPB

LM5110-1M/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

92

TPS2829QDBVRQ1

TPS2829QDBVRQ1

Texas Instruments

TPS2829-Q1 AUTOMOTIVE 4V TO 14V,

25836

UCC27200ADR

UCC27200ADR

Texas Instruments

120-V BOOT, 3A PEAK, HIGH FREQUE

1916

UCC27200DR

UCC27200DR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

2467

UCD7100PWPR

UCD7100PWPR

Texas Instruments

IC GATE DRVR LOW-SIDE 14HTSSOP

4872

UCC27321DR

UCC27321DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

2745

UCC27423DR

UCC27423DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

2615

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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