PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
DRV8300NRGER

DRV8300NRGER

Texas Instruments

100-V MAX SIMPLE 3-PHASE GATE DR

0

UCC37324D

UCC37324D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

300

UCC3776N

UCC3776N

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

15695

LM5102SD/NOPB

LM5102SD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

487

LM25101CMYX/NOPB

LM25101CMYX/NOPB

Texas Instruments

LM25101 3A, 2A AND 1A HIGH VOLTA

3500

TPIC44L02DBR

TPIC44L02DBR

Texas Instruments

IC GATE DRVR LOW-SIDE 24SSOP

0

TPIC44L01DBR

TPIC44L01DBR

Texas Instruments

IC GATE DRVR LOW-SIDE 24SSOP

0

LM5101ASD-1/NOPB

LM5101ASD-1/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

1025

UCC27201ADDA

UCC27201ADDA

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

101

UCC27201AQDMKRQ1

UCC27201AQDMKRQ1

Texas Instruments

UCC27201A-Q1 AUTOMOTIVE 120-V BO

0

LM5112SDX

LM5112SDX

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

3562

LM5109AMAX/NOPB

LM5109AMAX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

2664

UC2707DWTR

UC2707DWTR

Texas Instruments

UC2707 COMPLEMENTARY HIGH SPEED

6000

UCC27712DR

UCC27712DR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

27

UCC27710D

UCC27710D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

392

LM27222MX/NOPB

LM27222MX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

1965

UCC27532QDBVRQ1

UCC27532QDBVRQ1

Texas Instruments

UCC27532-Q1 UCC27532-Q1 2.5-A AN

15025

SM74104MA/NOPB

SM74104MA/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

186

TPS2830PWP

TPS2830PWP

Texas Instruments

TPS2830 NON-INVERTING FAST SYNCH

32330

UCC27324DRG4

UCC27324DRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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