PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IXDI604SITR

IXDI604SITR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IX4426N

IX4426N

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

587

IXDI602SIATR

IXDI602SIATR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

148

IXDD609YI

IXDD609YI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO263

856

IXDN609SI

IXDN609SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

144

IX21844N

IX21844N

Wickmann / Littelfuse

IC GATE DRVR HALF-BRIDGE 14SOIC

289

IXDN609SITR

IXDN609SITR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

4528

IXDN614YI

IXDN614YI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO263-5

0

IXDI604PI

IXDI604PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

1001

IXDD614SI

IXDD614SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

2200

IXDN630YI

IXDN630YI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO263-5

1417

IX4351NE

IX4351NE

Wickmann / Littelfuse

MOSFET IGBT SIC DRIVER 9A

1513

IXDN604PI

IXDN604PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

1318

IXDI602PI

IXDI602PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

885

IXDN602PI

IXDN602PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

1129

IXDD604SI

IXDD604SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

322

IX4428NTR

IX4428NTR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

1417

IXDD609SITR

IXDD609SITR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IX4426MTR

IX4426MTR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DFN

0

IXDD609CI

IXDD609CI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO220-5

85

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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