PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IXDN602SIA

IXDN602SIA

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXDI609SI

IXDI609SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

4752

IX4340N

IX4340N

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

1473

IX4340UETR

IX4340UETR

Wickmann / Littelfuse

5-AMP DUAL LOW-SIDE MOSFET DRIVE

833

IXDD614CI

IXDD614CI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO220-5

836

IXDI614SI

IXDI614SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

473

IXDI609SIA

IXDI609SIA

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXDI609PI

IXDI609PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

990

IXDN602D2TR

IXDN602D2TR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DFN

0

IXDI609YI

IXDI609YI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO263-5

1184

IXDN602SI

IXDN602SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

569

IXDI609SITR

IXDI609SITR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

1900

IXDN630MYI

IXDN630MYI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO263-5

270

IXDI602D2TR

IXDI602D2TR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DFN

0

IXDI604SIA

IXDI604SIA

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

93

IXDF602SITR

IXDF602SITR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXDD604SIATR

IXDD604SIATR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

173012000

IXDD630MYI

IXDD630MYI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO263-5

4870

IXDF604SI

IXDF604SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

550

IX4425N

IX4425N

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

173

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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