PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IXDD630YI

IXDD630YI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO263-5

6494

IX4340NTR

IX4340NTR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

2710

IXDD609SIATR

IXDD609SIATR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

1826

IXDI609SIATR

IXDI609SIATR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

2966

IXDI602SIA

IXDI602SIA

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

108

IXDD604PI

IXDD604PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

1539

IXDN609CI

IXDN609CI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO220-5

1517

IXDF604SIA

IXDF604SIA

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXDN609YI

IXDN609YI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO263-5

0

IXDN604SIA

IXDN604SIA

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

4380

IXDI602SI

IXDI602SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXDN614SITR

IXDN614SITR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXDI602SITR

IXDI602SITR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IX4340UE

IX4340UE

Wickmann / Littelfuse

5-AMP DUAL LOW-SIDE MOSFET DRIVE

849

IXDD630MCI

IXDD630MCI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO220-5

224

IXDD609D2TR

IXDD609D2TR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DFN

2980

IXDD614PI

IXDD614PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

813

IXDN614CI

IXDN614CI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO220-5

879

IXDI614SITR

IXDI614SITR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

578

IXRFD630

IXRFD630

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 30A

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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