PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
ADP3414JRZ-REEL7

ADP3414JRZ-REEL7

Analog Devices, Inc.

DUAL BOOTSTRAPPED MOSFET DRIVER

2000

MAX5063BASA+

MAX5063BASA+

Analog Devices, Inc.

MAX5063 125V/2AMP, HIGH-SPEED, H

1725

MAX15070AEUT+T

MAX15070AEUT+T

Analog Devices, Inc.

MOSFET DRIVER

14850

LT8672JDDB#TRMPBF

LT8672JDDB#TRMPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 10DFN

318

MAX620EWN

MAX620EWN

Analog Devices, Inc.

QUAD, HIGH-SIDE MOSFET DRIVER

8695

TSC426CBA

TSC426CBA

Analog Devices, Inc.

TSC426 DUAL POWER MOSFET DRIVER

2000

LT1166CS8#PBF

LT1166CS8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

344

LT1161ISW#PBF

LT1161ISW#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 20SOIC

6659

MAX627CSA

MAX627CSA

Analog Devices, Inc.

MAX627 DUAL POWER MOSFET DRIVER

0

LTC3900MPS8#TRPBF

LTC3900MPS8#TRPBF

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 8SO

0

MAX15025DATB+T

MAX15025DATB+T

Analog Devices, Inc.

HIGH SINK CURRENT GATE DRIVER

5000

LTC7062IMSE#WTRPBF

LTC7062IMSE#WTRPBF

Analog Devices, Inc.

100V DUAL HIGH-SIDE MOSFET GATE

0

LTC7004IMSE#TRPBF

LTC7004IMSE#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 10MSOP

4488

LTC4440ES6-5#TRPBF

LTC4440ES6-5#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE TSOT23-6

1848

ADP3633ARHZ-RL

ADP3633ARHZ-RL

Analog Devices, Inc.

HIGH SPEED, DUAL, 4 AMP MOSFET D

2445

ADUM4221-1ARIZ

ADUM4221-1ARIZ

Analog Devices, Inc.

ISO 1/2 BRIDGE DRV W PWM UVLO 4.

17

LTC1155IN8#PBF

LTC1155IN8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8DIP

500

LTC7062EMSE#TRPBF

LTC7062EMSE#TRPBF

Analog Devices, Inc.

100V DUAL HIGH-SIDE MOSFET GATE

0

LTC4440AIMS8E-5#PBF

LTC4440AIMS8E-5#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8MSOP

233

LTC4440ES6#TRPBF

LTC4440ES6#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE TSOT23-6

12314

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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