PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LTC1156CSW#PBF

LTC1156CSW#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16SOIC

128

MAX4427CSA

MAX4427CSA

Analog Devices, Inc.

MOSFET DRIVER

3573

MAX8552ETB+T

MAX8552ETB+T

Analog Devices, Inc.

MAX8552 HIGH-SPEED, WIDE-INPUT,

2100

LTC1255IS8#PBF

LTC1255IS8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

529

LT1160IS#PBF

LT1160IS#PBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 14SOIC

6

LTC4441EMSE#PBF

LTC4441EMSE#PBF

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 10MSOP

26

LTC1154HS8#TRPBF

LTC1154HS8#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

0

LTC1154CS8#PBF

LTC1154CS8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

356

TSC428EJA

TSC428EJA

Analog Devices, Inc.

TSC428 DUAL POWER MOSFET DRIVER

788

LTC1155IS8#PBF

LTC1155IS8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

600

MAX4429ESA

MAX4429ESA

Analog Devices, Inc.

MOSFET DRIVER

0

ADP3118JRZ

ADP3118JRZ

Analog Devices, Inc.

DUAL MOSFET DRIVER

392

LTC7000HMSE#PBF

LTC7000HMSE#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16MSOP

8

ADP3654ARHZ

ADP3654ARHZ

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 8MINISOIC

19

LTC1155IS8#TRPBF

LTC1155IS8#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

2190

ADP3629ARMZ-R7

ADP3629ARMZ-R7

Analog Devices, Inc.

HIGH SPEED, DUAL, 2 A MOSFET DRI

17145

LTC4442EMS8E#TRPBF

LTC4442EMS8E#TRPBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 8MSOP

0

MAX620EPN

MAX620EPN

Analog Devices, Inc.

QUAD, HIGH-SIDE MOSFET DRIVER

689

LTC4442IMS8E#PBF

LTC4442IMS8E#PBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 8MSOP

0

LTC3900ES8#PBF

LTC3900ES8#PBF

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 8SOIC

234

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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