PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LTC7001HMSE#TRPBF

LTC7001HMSE#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 10MSOP

0

ADP3413JR-REEL

ADP3413JR-REEL

Analog Devices, Inc.

DUAL BOOTSTRAPPED MOSFET DRIVER

12500

LTC7000JMSE-1#PBF

LTC7000JMSE-1#PBF

Analog Devices, Inc.

FAST 150V PROTECTED HI SIDE NMOS

157

LT1166CN8#PBF

LT1166CN8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8DIP

188

LTC1693-2IS8#TRPBF

LTC1693-2IS8#TRPBF

Analog Devices, Inc.

IC GATE DRVR HI/LOW SIDE 8SOIC

2110

LT8672JMS#PBF

LT8672JMS#PBF

Analog Devices, Inc.

ACTIVE RECTIFIER CNTR W/ REVERSE

126

MAX15024CATB+T

MAX15024CATB+T

Analog Devices, Inc.

HIGH SOURCE CURRENT GATE DRIVER

2500

LTC4440EMS8E#PBF

LTC4440EMS8E#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8MSOP

3668

LTC7000MPMSE#TRPBF

LTC7000MPMSE#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16MSOP

0

ADP3418JR

ADP3418JR

Analog Devices, Inc.

DUAL BOOSTRAPPED 12V MOSFET DRIV

1226

LTC1255IS8#TRPBF

LTC1255IS8#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

0

LTC1623CMS8#PBF

LTC1623CMS8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8MSOP

0

LTC4444EMS8E#PBF

LTC4444EMS8E#PBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 8MSOP

35

LTC1156CN#PBF

LTC1156CN#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16DIP

0

LTC7000JMSE#WPBF

LTC7000JMSE#WPBF

Analog Devices, Inc.

FAST 150V PROTECTED HI SIDE NMOS

0

LT1158ISW#PBF

LT1158ISW#PBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 16SOIC

0

LTC1157CN8#PBF

LTC1157CN8#PBF

Analog Devices, Inc.

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

0

LTC4440AMPMS8E-5#TRPBF

LTC4440AMPMS8E-5#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8MSOP

0

MAX5048BAUT

MAX5048BAUT

Analog Devices, Inc.

7.6A, 12NS, TDFN, MOSFET DRIVER

0

LTC3901EGN#PBF

LTC3901EGN#PBF

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 16SSOP

265

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

RFQ BOM Call Skype Email
Top