PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
L9380-LF

L9380-LF

STMicroelectronics

IC GATE DRVR HIGH-SIDE 20SO

0

L6390D

L6390D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 16SO

1896

L6491D

L6491D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

1026

L6399D

L6399D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

0

L6498LD

L6498LD

STMicroelectronics

IC GATE DRV HI-SIDE/LO-SIDE 14SO

749

L6398DTR

L6398DTR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

134085000

TD351ID

TD351ID

STMicroelectronics

IC GATE DRVR HIGH-SIDE 8SO

0

L6386ED013TR

L6386ED013TR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

46

L6571BD

L6571BD

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

863

L6392D

L6392D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

30161000

TD350ETR

TD350ETR

STMicroelectronics

IC GATE DRVR HIGH-SIDE 14SO

5321

L6494LD

L6494LD

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

676

L6747CTR

L6747CTR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8VFDFPN

0

L6393D

L6393D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

2000

L9907

L9907

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 64TQFP

0

L6399DTR

L6399DTR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

20415000

L6389EDTR

L6389EDTR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE HI/LO

0

TD310ID

TD310ID

STMicroelectronics

IC GATE DRVR LOW-SIDE 16SO

0

L6571BD013TR

L6571BD013TR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

0

L9856-TR-LF

L9856-TR-LF

STMicroelectronics

IC GATE DRVR HIGH-SIDE 8SO

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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