PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
L6387ED

L6387ED

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

7442000

PM8834

PM8834

STMicroelectronics

IC GATE DRVR LOW-SIDE 8SOIC

0

L6384ED

L6384ED

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

2758

L6743DTR

L6743DTR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

1

L6498LDTR

L6498LDTR

STMicroelectronics

IC GATE DRV HI-SIDE/LO-SIDE 14SO

985

L6386ED

L6386ED

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

3252

L6494LDTR

L6494LDTR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

2669

L6743BTR

L6743BTR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8VFDFPN

0

TD310IDT

TD310IDT

STMicroelectronics

IC GATE DRVR LOW-SIDE 16SO

2392

L6388ED013TR

L6388ED013TR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

24

L6569

L6569

STMicroelectronics

IC GATE DRVR HALF-BRIDG 8MINIDIP

1259

L6392DTR

L6392DTR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

250025000

L6388ED

L6388ED

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

3032000

STSR30D

STSR30D

STMicroelectronics

IC GATE DRVR LOW-SIDE 8SO

255

TD352IDT

TD352IDT

STMicroelectronics

IC GATE DRVR HIGH-SIDE 8SO

80557500

PM8834TR

PM8834TR

STMicroelectronics

IC GATE DRVR LOW-SIDE 8SOIC

1217

L6398D

L6398D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

588

L6395D

L6395D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

2882000

STSR30D-TR

STSR30D-TR

STMicroelectronics

IC GATE DRVR LOW-SIDE 8SO

0

L6741TR

L6741TR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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