PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
L6386D

L6386D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

0

L6388D

L6388D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

0

TD352ID

TD352ID

STMicroelectronics

IC GATE DRVR HIGH-SIDE 8SO

0

L6571AD

L6571AD

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

0

L6569D013TR

L6569D013TR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

0

L6387

L6387

STMicroelectronics

IC GATE DRVR HALF-BRIDG 8MINIDIP

0

L6743TR

L6743TR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

0

L6387E

L6387E

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8DIP

0

L6385D

L6385D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

0

L9610C013TR

L9610C013TR

STMicroelectronics

IC GATE DRVR HIGH-SIDE 16SO

0

STSR2PCD-TR

STSR2PCD-TR

STMicroelectronics

IC GATE DRVR LOW-SIDE 8SO

0

L6743

L6743

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

0

L6386D013TR

L6386D013TR

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

0

L6386E

L6386E

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14DIP

0

TD350ID

TD350ID

STMicroelectronics

IC GATE DRVR HIGH-SIDE 14SO

0

L6571A

L6571A

STMicroelectronics

IC GATE DRVR HALF-BRIDG 8MINIDIP

0

STSR2PCD

STSR2PCD

STMicroelectronics

IC GATE DRVR LOW-SIDE 8SO

0

L6384

L6384

STMicroelectronics

IC GATE DRVR HALF-BRIDG 8MINIDIP

0

STSR3CD

STSR3CD

STMicroelectronics

IC GATE DRVR LOW-SIDE 8SO

0

TD350IDT

TD350IDT

STMicroelectronics

IC GATE DRVR HIGH-SIDE 14SO

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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