PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IXDI604SIATR

IXDI604SIATR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

ISL2110ABZ

ISL2110ABZ

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

UC2710N

UC2710N

UC2710 COMPLEMENTARY HIGH CURREN

1980

IRS21864SPBF

IRS21864SPBF

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 14SOIC

3440

IRS2301STRPBF

IRS2301STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

AUIR3241STR

AUIR3241STR

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SO

1410

TC4431EOA

TC4431EOA

Roving Networks / Microchip Technology

IC GATE DRVR HI/LOW SIDE 8SOIC

1093

IRS2109STRPBF

IRS2109STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

1218

FAN3225CMX-F085

FAN3225CMX-F085

FULL BRIDGE BASED PERIPHERAL DRI

60000

NCP303151MNTWG

NCP303151MNTWG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HI/LOW SIDE PQFN39

0

TC4420IJA

TC4420IJA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8CERDIP

6

ISL6205CB

ISL6205CB

Intersil (Renesas Electronics America)

BUFFER/INVERTER MOSFET DRIVER

1930

IX4310TTR

IX4310TTR

Wickmann / Littelfuse

MOSFET DRIVER 2A 24V SOT23

1563

LTC4442IMS8E#PBF

LTC4442IMS8E#PBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 8MSOP

0

ISL6597CRZ-T

ISL6597CRZ-T

Intersil (Renesas Electronics America)

BUFFER/INVERTER MOSFET DRIVER

12000

IR2104PBF

IR2104PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

4132

IX4427N

IX4427N

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

1062

ISL6609AIBZ-T

ISL6609AIBZ-T

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

2ED2106S06FXUMA1

2ED2106S06FXUMA1

IR (Infineon Technologies)

IC GATE DRIVER 8-DSO

4530

MCP14E9-E/P

MCP14E9-E/P

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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