PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LTC4442EMS8E-1#TRPBF

LTC4442EMS8E-1#TRPBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 8MSOP

0

IR2110PBF

IR2110PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DIP

6414

TPIC46L02DB

TPIC46L02DB

Texas Instruments

TPIC46L02 6-CHANNEL SERIAL/PARAL

24927

ADUM4221CRIZ-RL

ADUM4221CRIZ-RL

Analog Devices, Inc.

ISO 1/2 BRIDGE DRV W/DEADTIME UV

0

UCC37323DGN

UCC37323DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

540

UCC27200DDA

UCC27200DDA

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

502

MAX4429EPA+

MAX4429EPA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8DIP

1113200

FAN73894MX

FAN73894MX

HALF BRIDGE BASED PERIPHERAL DRI

4459

TC4426MJA

TC4426MJA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8CERDIP

27

TPS2814D

TPS2814D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

724

IXDN602SITR

IXDN602SITR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

MC33152DR2G

MC33152DR2G

BUFFER/INVERTER BASED MOSFET DRI

5357

RT9624AZSP

RT9624AZSP

Richtek

IC GATE DRVR HALF-BRIDGE 8SOP

0

TC4428ACOA713

TC4428ACOA713

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

922

IRS2334MTRPBF

IRS2334MTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28MLPQ

20

NCP4413DR2

NCP4413DR2

BUFFER/INVERTER MOSFET DRIVER

53256

MCP14A0453-E/MS

MCP14A0453-E/MS

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8MSOP

0

IR2132SPBF

IR2132SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

594

L6393D

L6393D

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14SO

2000

TC4422MJA

TC4422MJA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8CERDIP

75

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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