PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
FAN7371M

FAN7371M

HALF BRIDGE PERIPHERAL DRIVER

10575

FAN73932MX

FAN73932MX

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HALF-BRIDGE 8SOP

1479

EL7242CS

EL7242CS

AND GATE BASED MOSFET DRIVER, 2A

1633

FAN7080M-GF085

FAN7080M-GF085

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HALF-BRIDGE 8SOIC

8715

MAX620EPN

MAX620EPN

Analog Devices, Inc.

QUAD, HIGH-SIDE MOSFET DRIVER

689

TSC428CBA+

TSC428CBA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

361100

UCC27712QDRQ1

UCC27712QDRQ1

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

765

MIC4425YM

MIC4425YM

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

394

MAX5063DASA+

MAX5063DASA+

Maxim Integrated

IC GATE DRVR HALF-BRIDGE 8SOIC

551700

TPS2835DR

TPS2835DR

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER

15000

MCP1407T-E/MF

MCP1407T-E/MF

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DFN

1523

IR2010SPBF

IR2010SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16SOIC

217

FAN3229CMX-F085

FAN3229CMX-F085

FULL BRIDGE BASED PERIPHERAL DRI

10000

FAN7191MX-F085

FAN7191MX-F085

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HALF-BRIDGE 8SOIC

1126

LM5114BSD/NOPB

LM5114BSD/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

213

ISL6609ACRZ-T

ISL6609ACRZ-T

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 8QFN

0

TC4421ESM

TC4421ESM

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIJ

32

HIP4082IPZ

HIP4082IPZ

Intersil (Renesas Electronics America)

IC GATE DRVR HALF-BRIDGE 16DIP

0

EL7457CSZ-T7

EL7457CSZ-T7

Intersil (Renesas Electronics America)

IC GATE DRVR HI/LOW SIDE 16SOIC

0

2DM150606CM

2DM150606CM

Tamura

IC GATE DRVR HALF-BRIDGE 0502

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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