Memory

Part Number	Description / PDF	Quantity
MT58L256L36FS-7.5TR Micron Technology	SRAM SYNC QUAD 8M-BIT 256KX36	1000
MT57W2MH8CF-5 Micron Technology	DDR SRAM, 2MX8, 0.45NS PBGA165	518
MT48LC8M16A2B4-6A AIT:L TR Micron Technology	IC DRAM 128MBIT PARALLEL 54VFBGA	1663
MT28FW512ABA1LJS-0AAT TR Micron Technology	IC FLASH 512MBIT PARALLEL 56TSOP	0
MT29F16G08ABCCBH1-10ITZ:C TR Micron Technology	IC FLASH 16GBIT PARALLEL 100VBGA	1599
MT48LC4M16A2P-6A:J TR Micron Technology	IC DRAM 64MBIT PAR 54TSOP II	0
MT53B128M32D1DS-062 IT:A Micron Technology	IC DRAM 4GBIT 1.6GHZ 200WFBGA	0
MT25QU01GBBB8E12-0AAT Micron Technology	IC FLSH 1GBIT SPI 133MHZ 24TPBGA	0
MT58L1MY18FT-8.5 Micron Technology	CACHE SRAM, 1MX18, 8.5NS PQFP100	964
MT58L256L32FS-7.5 Micron Technology	CACHE SRAM, 256KX32, 7.5NS PQFP1	426
MT28EW512ABA1HPC-0AAT Micron Technology	IC FLASH 512MBIT PARALLEL 64LBGA	0
MT58L64L32FT-10 Micron Technology	IC SRAM 2MBIT PARALLEL 100TQFP	3641
MT29F4G08ABADAWP-AATX:D TR Micron Technology	IC FLASH 4GBIT PARALLEL 48TSOP I	0
MT55L512L18FT-12 Micron Technology	ZBT SRAM, 512KX18, 9NS PQFP100	1461
MT25QL512ABB8ESF-0SIT Micron Technology	IC FLASH 512MBIT SPI 133MHZ 16SO	0
MT53E256M32D2DS-053 AAT:B Micron Technology	IC DRAM 8GBIT 1.866GHZ 200WFBGA	965
MT54W1MH18BF-5 Micron Technology	IC SRAM 18MBIT PARALLEL 165FBGA	4594
MT58L64L32PT-7.5TR Micron Technology	SRAM SYNC QUAD 2M-BIT 64KX32	2500
MT58L256L32FT-8.5 Micron Technology	CACHE SRAM, 256KX32, 8.5NS PQFP1	3223
MT29F8G16ADADAH4-IT:D TR Micron Technology	IC FLASH 8GBIT PARALLEL 63VFBGA	2

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)