Memory

Part Number	Description / PDF	Quantity
MT55L256L36FT-11 Micron Technology	IC SRAM 8MBIT PARALLEL 100TQFP	0
MT55V1MV18FT-11 Micron Technology	ZBT SRAM, 1MX18, 8.5NS PQFP100	263
MTFC16GAPALBH-IT Micron Technology	IC FLASH 128GBIT MMC 153TFBGA	0
MT28EW512ABA1HJS-0SIT TR Micron Technology	IC FLASH 512MBIT PARALLEL 56TSOP	0
MT48LC4M32B2B5-6A AAT:L Micron Technology	IC DRAM 128MBIT PARALLEL 90VFBGA	0
MT58L32L32DT-6 Micron Technology	IC SRAM 1MBIT PARALLEL 100TQFP	0
MT58L128L32P1T-6 Micron Technology	IC SRAM 4MBIT PARALLEL 100TQFP	16376
MT55L512Y36PT-6 Micron Technology	IC SRAM 18MBIT PARALLEL 100TQFP	424
MT29F512G08EEHAFJ4-3R:A TR Micron Technology	IC FLASH 512GBIT PAR 132VBGA	0
MT29F16G08ABABAWP-AIT:B TR Micron Technology	IC FLSH 16GBIT PARALLEL 48TSOP I	186
MT58L128V32P1T-10 Micron Technology	IC SRAM 4MBIT PARALLEL 100TQFP	3000
MT25QU512ABB8ESF-0AAT Micron Technology	IC FLASH 512MBIT SPI 133MHZ 16SO	0
MT41K256M8DA-125 AAT:K Micron Technology	IC DRAM 2GBIT PARALLEL 78FBGA	0
MT28FW512ABA1LPC-0AAT TR Micron Technology	IC FLASH 512MBIT PARALLEL 64LBGA	0
MT46H32M32LFB5-5 AIT:B Micron Technology	IC DRAM 1GBIT PARALLEL 90VFBGA	0
MT53E256M32D2DS-046 AIT:B Micron Technology	IC DRAM 8GBIT 2.133GHZ 200WFBGA	0
MT28EW256ABA1LJS-0SIT TR Micron Technology	IC FLASH 256MBIT PARALLEL 56TSOP	0
MT55L256L18F1T-11 Micron Technology	ZBT SRAM, 256KX18, 8.5NS PQFP100	558
MT53E384M32D2DS-053 WT:E Micron Technology	IC DRAM 12GBIT 1.866GHZ 200WFBGA	1360
MT58L256L36FT-10IT Micron Technology	CACHE SRAM 256KX36 10NS PQFP100	1833

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)